BC516
- Mfr.Part #
- BC516
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1A TO92-3
- Stock
- 14,919
- In Stock :
- 14,919
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Current :
- 4A
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- Polarity :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Published :
- 2015
- Mount :
- Through Hole
- Max Collector Current :
- 1A
- Weight :
- 200.005886mg
- Base Part Number :
- BC516
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- -30V
- Frequency - Transition :
- 200MHz
- hFE Min :
- 30000
- Transition Frequency :
- 200MHz
- Height :
- 5.33mm
- Emitter Base Voltage (VEBO) :
- 10V
- Current Rating :
- -1A
- Collector Emitter Saturation Voltage :
- 1V
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 40V
- Width :
- 4.19mm
- Number of Elements :
- 1
- Continuous Collector Current :
- 1A
- Length :
- 5.2mm
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage :
- 30V
- Transistor Type :
- PNP - Darlington
- Lead Free :
- Lead Free
- Datasheets
- BC516
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PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
Description
The BC516 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 1A. The Darlington configuration, also known as a Darlington pair in electronics, is a circuit made up of two bipolar transistors with one transistor's emitter connected to the other's base, causing the current to increase by the first transistor to be amplified even more by the second. Both transistors' collectors are interconnected. Comparing this setup to each transistor alone, the current gain is significantly higher. It functions like a transistor and is frequently packaged in that way.
Features
-
-55 to 150°C Operating junction temperature range
-
This device is designed for applications reguiring extremely high current gain at currents to 1A
-
Higher switched currents
-
Available in a variety of single packages
-
A very high input impedance for the circuit
Applications
-
Power Management
-
Industrial
-
Safety
-
Amplification
-
Motors or Relays
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