BC516_J35Z
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- Mfr.Part #
- BC516_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1A TO92-3
- Stock
- 17,388
- In Stock ：
- 17,388
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 200MHz
- Power - Max :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Darlington
- Base Part Number :
- BC516
- Supplier Device Package :
- TO-92-3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BC516_J35Z
PNP - Darlington -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC516_J35Z Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30000 @ 20mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 100μA, 100mA.TO-92-3 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
BC516_J35Z Features
the DC current gain for this device is 30000 @ 20mA 2V
the vce saturation(Max) is 1V @ 100μA, 100mA
the supplier device package of TO-92-3
BC516_J35Z Applications
There are a lot of ON Semiconductor
BC516_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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