BC517ZL1
- Mfr.Part #
- BC517ZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1A TO92
- Stock
- 24,894
- In Stock :
- 24,894
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Packaging :
- Tape and Box (TB)
- JESD-30 Code :
- O-PBCY-T3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Transition Frequency :
- 200MHz
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- EUROPEAN PART NUMBER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 10V
- Continuous Collector Current :
- 1A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 1A
- Max Power Dissipation :
- 625mW
- Polarity :
- NPN
- Transistor Application :
- AMPLIFIER
- HTS Code :
- 8541.21.00.95
- Base Part Number :
- BC517
- Frequency - Transition :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 1V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- hFE Min :
- 30
- Current - Collector Cutoff (Max) :
- 500nA
- Datasheets
- BC517ZL1

NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC517ZL1 Overview
In this device, the DC current gain is 30000 @ 20mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
BC517ZL1 Features
the DC current gain for this device is 30000 @ 20mA 2V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 200MHz
BC517ZL1 Applications
There are a lot of ON Semiconductor
BC517ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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