BC517-D74Z
- Mfr.Part #
- BC517-D74Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1.2A TO92-3
- Stock
- 1,836
- In Stock :
- 1,836
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC517
- hFE Min :
- 30000
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Height :
- 5.33mm
- Max Breakdown Voltage :
- 30V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Width :
- 4.19mm
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Contact Plating :
- Copper, Silver, Tin
- Transistor Type :
- NPN - Darlington
- Length :
- 5.2mm
- Max Collector Current :
- 1.2A
- Continuous Collector Current :
- 1.2A
- Collector Emitter Breakdown Voltage :
- 30V
- Weight :
- 286mg
- Mounting Type :
- Through Hole
- Current Rating :
- 1.2A
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Factory Lead Time :
- 36 Weeks
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 2012
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 30V
- Datasheets
- BC517-D74Z

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC517-D74Z Overview
In this device, the DC current gain is 30000 @ 20mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100μA, 100mA.Maintaining the continuous collector voltage at 1.2A is essential for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1.2A).An input voltage of 30V volts is the breakdown voltage.Maximum collector currents can be below 1.2A volts.
BC517-D74Z Features
the DC current gain for this device is 30000 @ 20mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
BC517-D74Z Applications
There are a lot of ON Semiconductor
BC517-D74Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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