BC517

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Weight :

200mg

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Pin Count :

3

Element Configuration :

Single

Continuous Collector Current :

1.2A

Max Collector Current :

1A

Collector Emitter Breakdown Voltage :

30V

Emitter Base Voltage (VEBO) :

10V

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Frequency - Transition :

200MHz

Power Dissipation :

625mW

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Collector Emitter Voltage (VCEO) :

30V

Collector Emitter Saturation Voltage :

1V

Vce Saturation (Max) @ Ib, Ic :

1V @ 100μA, 100mA

Base Part Number :

BC517

Current Rating :

1.2A

Terminal Position :

BOTTOM

Radiation Hardening :

No

Number of Pins :

3

Peak Reflow Temperature (Cel) :

240

Packaging :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

30000 @ 20mA 2V

Transition Frequency :

200MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Max Breakdown Voltage :

30V

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

3

Collector Base Voltage (VCBO) :

40V

Mount :

Through Hole

Polarity :

NPN

Number of Elements :

1

Max Power Dissipation :

625mW

JESD-609 Code :

e0

Transistor Type :

NPN - Darlington

Voltage - Rated DC :

30V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Termination :

Through Hole

REACH SVHC :

No SVHC

Published :

2006

Operating Temperature :

-55°C~150°C TJ

hFE Min :

30000

Time@Peak Reflow Temperature-Max (s) :

30