BC517

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

Collector Emitter Breakdown Voltage :

30V

Published :

2006

REACH SVHC :

No SVHC

Base Part Number :

BC517

Max Breakdown Voltage :

30V

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Max Power Dissipation :

625mW

Power Dissipation :

625mW

Pin Count :

3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

240

Weight :

200mg

Transistor Type :

NPN - Darlington

Voltage - Rated DC :

30V

JESD-609 Code :

e0

Element Configuration :

Single

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Transition Frequency :

200MHz

Collector Base Voltage (VCBO) :

40V

Frequency - Transition :

200MHz

Mount :

Through Hole

Lead Free :

Lead Free

Packaging :

Bulk

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Pbfree Code :

No

Emitter Base Voltage (VEBO) :

10V

Continuous Collector Current :

1.2A

Number of Pins :

3

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

30

Vce Saturation (Max) @ Ib, Ic :

1V @ 100μA, 100mA

Current Rating :

1.2A

Polarity :

NPN

Termination :

Through Hole

hFE Min :

30000

Mounting Type :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Number of Elements :

1

Max Collector Current :

1A

RoHS Status :

Non-RoHS Compliant

Collector Emitter Saturation Voltage :

1V

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

30000 @ 20mA 2V