BC517,112

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Mfr.Part #
BC517,112
Manufacturer
NXP Semiconductors
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN DARL 30V 0.5A TO92-3
Stock
19,290
In Stock :
19,290

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Manufacturer :
NXP Semiconductors
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
220MHz
Operating Temperature :
150°C TJ
Transistor Application :
AMPLIFIER
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Frequency - Transition :
220MHz
Transistor Type :
NPN - Darlington
Terminal Finish :
Tin
Current - Collector Cutoff (Max) :
100nA ICBO
JESD-609 Code :
e3
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
30000 @ 20mA 2V
Number of Elements :
1
Base Part Number :
BC517
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
500mA
Polarity/Channel Type :
NPN
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Bulk
Voltage - Collector Emitter Breakdown (Max) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
VCEsat-Max :
1 V
HTS Code :
8541.21.00.75
ECCN Code :
EAR99
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
1V @ 100μA, 100mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Power - Max :
625mW
Peak Reflow Temperature (Cel) :
250
Surface Mount :
No
Mounting Type :
Through Hole
Published :
2004
Power Dissipation-Max (Abs) :
0.625W
JESD-30 Code :
O-PBCY-T3
Introducing Transistors - Bipolar (BJT) - Single NXP Semiconductors BC517,112 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:BC517, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, BC517,112 pinout, BC517,112 datasheet PDF, BC517,112 amp .Beyond Transistors - Bipolar (BJT) - Single NXP Semiconductors BC517,112 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors BC517,112


NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BC517,112 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30000 @ 20mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100μA, 100mA.A transition frequency of 220MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

BC517,112 Features


the DC current gain for this device is 30000 @ 20mA 2V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 220MHz


BC517,112 Applications


There are a lot of NXP USA Inc.
BC517,112 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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