BC517,112
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- Mfr.Part #
- BC517,112
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.5A TO92-3
- Stock
- 19,290
- In Stock ：
- 19,290
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- Packaging :
- Bulk
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Published :
- 2004
- Mounting Type :
- Through Hole
- Power - Max :
- 625mW
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Frequency - Transition :
- 220MHz
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 250
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin
- VCEsat-Max :
- 1 V
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 220MHz
- Power Dissipation-Max (Abs) :
- 0.625W
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC517
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- JESD-30 Code :
- O-PBCY-T3
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30000 @ 20mA 2V
- Number of Elements :
- 1
- Datasheets
- BC517,112
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC517,112 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30000 @ 20mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100μA, 100mA.A transition frequency of 220MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BC517,112 Features
the DC current gain for this device is 30000 @ 20mA 2V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 220MHz
BC517,112 Applications
There are a lot of NXP USA Inc.
BC517,112 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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