BC184_J35Z
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- Mfr.Part #
- BC184_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO92-3
- Stock
- 44,569
- In Stock ：
- 44,569
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-92-3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Packaging :
- Bulk
- Base Part Number :
- BC184
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Frequency - Transition :
- 150MHz
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 130 @ 100mA 5V
- Power - Max :
- 350mW
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BC184_J35Z
NPN -55°C~150°C TJ 15nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC184_J35Z Overview
In this device, the DC current gain is 130 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 30V.
BC184_J35Z Features
the DC current gain for this device is 130 @ 100mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of TO-92-3
BC184_J35Z Applications
There are a lot of ON Semiconductor
BC184_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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