BC182G
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- Mfr.Part #
- BC182G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92
- Stock
- 46,930
- In Stock ：
- 46,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Number of Elements :
- 1
- Base Part Number :
- BC182
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Current Rating :
- 100mA
- Voltage - Rated DC :
- 50V
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- hFE Min :
- 120
- Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Published :
- 2007
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Position :
- BOTTOM
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Max Power Dissipation :
- 350mW
- Gain Bandwidth Product :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Pin Count :
- 3
- Datasheets
- BC182G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC182G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 5V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 200MHz.A maximum collector current of 100mA volts can be achieved.
BC182G Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC182G Applications
There are a lot of ON Semiconductor
BC182G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| BC182 | onsemi | 47,313 | TRANS NPN 50V 0.1A TO92 |
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