BC182G
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- Mfr.Part #
- BC182G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92
- Stock
- 46,930
- In Stock ：
- 46,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 200MHz
- Power Dissipation :
- 350mW
- hFE Min :
- 120
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Max Power Dissipation :
- 350mW
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Base Part Number :
- BC182
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Published :
- 2007
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Frequency :
- 200MHz
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50V
- Current Rating :
- 100mA
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- Collector Emitter Saturation Voltage :
- 200mV
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Voltage - Rated DC :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Datasheets
- BC182G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC182G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 5V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 200MHz.A maximum collector current of 100mA volts can be achieved.
BC182G Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC182G Applications
There are a lot of ON Semiconductor
BC182G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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