BC182B
- Mfr.Part #
- BC182B
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92
- Stock
- 34,176
- In Stock :
- 34,176
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Published :
- 2007
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Voltage - Rated DC :
- 50V
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transition Frequency :
- 200MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 100mA
- Power Dissipation :
- 350mW
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Current Rating :
- 100mA
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Frequency :
- 200MHz
- Mounting Type :
- Through Hole
- hFE Min :
- 180
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Gain Bandwidth Product :
- 200MHz
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 350mW
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Base Part Number :
- BC182
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Datasheets
- BC182B
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC182BG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 2mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 200MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC182BG Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC182BG Applications
There are a lot of ON Semiconductor
BC182BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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