BC182BG
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- Mfr.Part #
- BC182BG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A TO92
- Stock
- 1,084
- In Stock ：
- 1,084
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Base Part Number :
- BC182
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Frequency :
- 200MHz
- Voltage - Rated DC :
- 50V
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 200mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 200MHz
- Mount :
- Through Hole
- Published :
- 2007
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Max Power Dissipation :
- 350mW
- Number of Elements :
- 1
- hFE Min :
- 180
- Power Dissipation :
- 350mW
- JESD-609 Code :
- e1
- Current Rating :
- 100mA
- Datasheets
- BC182BG
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC182BG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 2mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 200MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC182BG Features
the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC182BG Applications
There are a lot of ON Semiconductor
BC182BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| BC182 | onsemi | 47,313 | TRANS NPN 50V 0.1A TO92 |
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