AUIRGS30B60K
- Mfr.Part #
- AUIRGS30B60K
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- AUIRGS30B60K - AUTOMOTIVE IGBT D
- Stock
- 45,631
- In Stock :
- 45,631
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 78A
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 9.65mm
- Collector Emitter Breakdown Voltage :
- 600V
- Turn Off Time-Nom (toff) :
- 237 ns
- Transistor Application :
- Motor Control
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2.35V
- Published :
- 2010
- Peak Reflow Temperature (Cel) :
- 260
- Vce(on) (Max) @ Vge, Ic :
- 2.35V @ 15V, 30A
- Factory Lead Time :
- 9 Weeks
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Input Type :
- Standard
- Turn On Time :
- 74 ns
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Switching Energy :
- 350μJ (on), 825μJ (off)
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Length :
- 10.67mm
- Lead Free :
- Lead Free
- Test Condition :
- 400V, 30A, 10 Ω, 15V
- Height :
- 4.83mm
- Td (on/off) @ 25°C :
- 46ns/185ns
- Collector Emitter Voltage (VCEO) :
- 2.35V
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- IGBT Type :
- NPT
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 370W
- Gate-Emitter Voltage-Max :
- 20V
- Gate Charge :
- 102nC
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time-Max (tf) :
- 42ns
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Power Dissipation :
- 370W
- Current - Collector Pulsed (Icm) :
- 120A
- Datasheets
- AUIRGS30B60K

AUIRGS30B60K datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
AUIRGS30B60K Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
AUIRGS30B60K Features
Low VCE (on) Non Punch Through IGBT Technology
10μs Short Circuit Capability
Square RBSOA
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C
Lead-Free, RoHS Compliant
Automotive Qualified * *
AUIRGS30B60K Benefits
Benchmark Efficiency for Motor Control
Rugged Transient Performance for Increased Reliability
Low EMI
Excellent Current Sharing in Parallel Operation
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