AT-41500-GP4

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

UPPER

Max Power Dissipation :

500mW

Gain Bandwidth Product :

8 GHz

Mount :

Surface Mount

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

1.5V

ECCN Code :

EAR99

Configuration :

Single

Collector Base Voltage (VCBO) :

20V

Published :

2009

RoHS Status :

RoHS Compliant

Transition Frequency :

8000MHz

Gain :

8dB ~ 17dB

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 10mA 8V

Transistor Type :

NPN

Power Dissipation :

500mW

Packaging :

Tray

Operating Temperature :

200°C TJ

Collector Emitter Voltage (VCEO) :

12V

Number of Elements :

1

Collector Emitter Breakdown Voltage :

12V

Max Collector Current :

60mA

Number of Pins :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

60mA

Package / Case :

Die

Number of Terminations :

2

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.4dB ~ 3dB @ 1GHz ~ 4GHz

Frequency :

8GHz

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN