APT36GA60BD15
- Mfr.Part #
- APT36GA60BD15
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 65A 290W TO-247
- Stock
- 49,835
- In Stock :
- 49,835
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-247-3
- Series :
- POWER MOS 8™
- Td (on/off) @ 25°C :
- 16ns/122ns
- Mount :
- Through Hole
- Gate Charge :
- 18nC
- Max Collector Current :
- 65A
- Pin Count :
- 3
- Input Type :
- Standard
- Published :
- 1999
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PSFM-T3
- IGBT Type :
- PT
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Switching Energy :
- 307μJ (on), 254μJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOW CONDUCTION LOSS
- Gate-Emitter Thr Voltage-Max :
- 6V
- Max Power Dissipation :
- 290W
- Factory Lead Time :
- 29 Weeks
- Polarity/Channel Type :
- N-Channel
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 20A
- Turn On Time :
- 29 ns
- RoHS Status :
- RoHS Compliant
- Current - Collector Pulsed (Icm) :
- 109A
- Number of Terminations :
- 3
- Gate-Emitter Voltage-Max :
- 30V
- Transistor Application :
- POWER CONTROL
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Test Condition :
- 400V, 20A, 10 Ω, 15V
- Power - Max :
- 290W
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 600V
- Radiation Hardening :
- No
- Turn Off Time-Nom (toff) :
- 262 ns
- Datasheets
- APT36GA60BD15

APT36GA60BD15 datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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