APT30GT60KRG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

600V

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Series :

Thunderbolt IGBT®

Terminal Finish :

PURE MATTE TIN

Current - Collector Pulsed (Icm) :

110A

Switching Energy :

525μJ (on), 600μJ (off)

Gate-Emitter Thr Voltage-Max :

5V

Pbfree Code :

yes

Radiation Hardening :

No

Pin Count :

3

Td (on/off) @ 25°C :

12ns/225ns

Mounting Type :

Through Hole

Current Rating :

64A

Collector Emitter Breakdown Voltage :

600V

Max Collector Current :

64A

Mount :

Through Hole

Gate-Emitter Voltage-Max :

30V

Test Condition :

400V, 30A, 10 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 30A

Published :

2008

Turn On Time :

32 ns

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

250W

Package / Case :

TO-220-3

Packaging :

Tube

RoHS Status :

RoHS Compliant

IGBT Type :

NPT

Transistor Application :

POWER CONTROL

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

600V

Input Type :

Standard

Element Configuration :

Single

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

345 ns

JEDEC-95 Code :

TO-220AB

Gate Charge :

145nC

JESD-609 Code :

e3

Transistor Element Material :

SILICON