APT30GT60BRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

110A

Switching Energy :

525μJ (on), 600μJ (off)

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

145nC

Turn On Time :

32 ns

Test Condition :

400V, 30A, 10 Ω, 15V

Input Type :

Standard

Continuous Collector Current :

64A

Collector Emitter Voltage (VCEO) :

600V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Package / Case :

TO-247-3

Width :

16.26mm

IGBT Type :

NPT

Max Collector Current :

64A

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Height :

5.31mm

Element Configuration :

Single

Transistor Application :

POWER CONTROL

Factory Lead Time :

24 Weeks

Max Power Dissipation :

250W

RoHS Status :

RoHS Compliant

Weight :

38.000013g

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 30A

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Gate-Emitter Thr Voltage-Max :

5V

Published :

1999

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Current Rating :

64A

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

12ns/225ns

Series :

Thunderbolt IGBT®

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate-Emitter Voltage-Max :

30V

Turn Off Time-Nom (toff) :

345 ns

Packaging :

Tube

Collector Emitter Saturation Voltage :

2V

Number of Elements :

1

Length :

21.46mm

Mounting Type :

Through Hole

Pin Count :

3

Lead Free :

Lead Free

Number of Terminations :

3

Voltage - Rated DC :

600V

JEDEC-95 Code :

TO-247AD

JESD-609 Code :

e1