APT25GP90BG
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- Mfr.Part #
- APT25GP90BG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 900V 72A 417W TO247
- Stock
- 47,804
- In Stock ：
- 47,804
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- TIN SILVER COPPER
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 30 Weeks
- JEDEC-95 Code :
- TO-247AD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 900V
- Input Type :
- Standard
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 900V
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Published :
- 1999
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Pin Count :
- 3
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Current - Collector Pulsed (Icm) :
- 110A
- Number of Terminations :
- 3
- Turn On Time :
- 29 ns
- Switching Energy :
- 370μJ (off)
- Turn Off Time-Nom (toff) :
- 190 ns
- Current Rating :
- 72A
- Transistor Application :
- POWER CONTROL
- Td (on/off) @ 25°C :
- 13ns/55ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 3.9V @ 15V, 25A
- IGBT Type :
- PT
- Collector Emitter Voltage (VCEO) :
- 900V
- Mount :
- Through Hole
- Series :
- POWER MOS 7®
- Number of Elements :
- 1
- Max Collector Current :
- 72A
- Additional Feature :
- LOW CONDUCTION LOSS
- Gate Charge :
- 110nC
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 417W
- Test Condition :
- 600V, 25A, 5 Ω, 15V
- Package / Case :
- TO-247-3
- Datasheets
- APT25GP90BG
APT25GP90BG datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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