APT25GN120B2DQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Gate Charge :

155nC

Voltage - Rated DC :

1.2kV

Packaging :

Tube

Factory Lead Time :

29 Weeks

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

1200V

Pbfree Code :

yes

Additional Feature :

High Reliability

ECCN Code :

EAR99

Radiation Hardening :

No

IGBT Type :

NPT, Trench Field Stop

Collector Emitter Voltage (VCEO) :

1.2kV

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn On Time :

39 ns

Test Condition :

800V, 25A, 4.3 Ω, 15V

Case Connection :

COLLECTOR

Mount :

Through Hole

Number of Terminations :

3

Transistor Element Material :

SILICON

Published :

1999

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

22ns/280ns

JESD-609 Code :

e1

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

1.2kV

Turn Off Time-Nom (toff) :

560 ns

Gate-Emitter Thr Voltage-Max :

6.5V

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

67A

Pin Count :

3

Input Type :

Standard

Number of Pins :

3

Switching Energy :

2.15μJ (off)

Transistor Application :

POWER CONTROL

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 25A

Current Rating :

67A

Max Power Dissipation :

272W

Current - Collector Pulsed (Icm) :

75A

Package / Case :

TO-247-3 Variant