AOI4N60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

Avalanche Energy Rating (Eas) :

235 mJ

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

4A

Pin Count :

3

Power Dissipation-Max :

104W Tc

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 2A, 10V

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

600V

Mount :

Through Hole

Published :

2011

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 250μA

FET Type :

N-Channel

Package / Case :

TO-251-3 Stub Leads, IPak

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-251A

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-50°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Packaging :

Tube