AOI4185

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain-source On Resistance-Max :

0.015Ohm

Pin Count :

3

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Number of Terminations :

3

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

115A

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 20V

Drain Current-Max (Abs) (ID) :

50A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

DS Breakdown Voltage-Min :

40V

Package / Case :

TO-251-3 Stub Leads, IPak

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PSIP-T3

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

15m Ω @ 20A, 10V

Packaging :

Tube

FET Type :

P-Channel

Power Dissipation-Max :

2.5W Ta 62.5W Tc

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

40A