AOI444

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

20W

Drain-source On Resistance-Max :

0.06Ohm

ECCN Code :

EAR99

Terminal Position :

Single

Pin Count :

3

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2.1W Ta 20W Tc

Number of Terminations :

3

Continuous Drain Current (ID) :

12A

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

60m Ω @ 12A, 10V

Package / Case :

TO-251-3 Stub Leads, IPak

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 30V

DS Breakdown Voltage-Min :

60V

Packaging :

Tube

Pbfree Code :

yes

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4A Ta 12A Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mount :

Through Hole

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Published :

2010

Number of Pins :

3

Case Connection :

DRAIN