AOI442

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Terminations :

3

Power Dissipation-Max :

2.1W Ta 60W Tc

Avalanche Energy Rating (Eas) :

45 mJ

Drain-source On Resistance-Max :

0.025Ohm

Rds On (Max) @ Id, Vgs :

20m Ω @ 20A, 10V

Continuous Drain Current (ID) :

37A

Terminal Position :

Single

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

7A Ta 37A Tc

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

60A

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Power Dissipation :

60W

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Number of Pins :

3

Package / Case :

TO-251-3 Stub Leads, IPak

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Published :

2009