AOI409

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.055Ohm

Published :

2011

Mount :

Through Hole

FET Type :

P-Channel

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

34 mJ

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 60W Tc

Continuous Drain Current (ID) :

26A

Transistor Application :

SWITCHING

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

40m Ω @ 20A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-251-3 Stub Leads, IPak

Packaging :

Tube

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

80A

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 30V