2STR2230
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- Mfr.Part #
- 2STR2230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A SOT23-3
- Stock
- 6,466
- In Stock ：
- 6,466
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2STR
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Width :
- 1.3mm
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 1.5A
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 100MHz
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Pin Count :
- 3
- hFE Min :
- 70
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- -30V
- Voltage - Rated DC :
- -30V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 30V
- Height :
- 950μm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- -1.5A
- Collector Emitter Saturation Voltage :
- -420mV
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Max Power Dissipation :
- 500mW
- Power Dissipation :
- 500mW
- Length :
- 2.9mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Datasheets
- 2STR2230
2STR2230 Documents
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -420mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR2230 Features
the DC current gain for this device is 170 @ 500mA 2V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 100MHz
2STR2230 Applications
There are a lot of STMicroelectronics
2STR2230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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