2STR2230
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- Mfr.Part #
- 2STR2230
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1.5A SOT23-3
- Stock
- 6,466
- In Stock ：
- 6,466
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Base Part Number :
- 2STR
- Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 70
- Width :
- 1.3mm
- Current Rating :
- -1.5A
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -420mV
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Length :
- 2.9mm
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- -65°C~150°C TJ
- Max Collector Current :
- 1.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Collector Emitter Breakdown Voltage :
- -30V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 950μm
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -30V
- Max Power Dissipation :
- 500mW
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Datasheets
- 2STR2230
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2230 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -420mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 1.5A volts.
2STR2230 Features
the DC current gain for this device is 170 @ 500mA 2V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 100MHz
2STR2230 Applications
There are a lot of STMicroelectronics
2STR2230 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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