2STR1160
- Mfr.Part #
- 2STR1160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 18,891
- In Stock :
- 18,891
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 500mW
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2STR
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.04mm
- Transistor Type :
- NPN
- hFE Min :
- 180
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Width :
- 1.6mm
- Max Power Dissipation :
- 500mW
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 430mV
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 210
- Max Collector Current :
- 1A
- Height :
- 1.3mm
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Application :
- SWITCHING
- Datasheets
- 2STR1160
2STR1160 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 430mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR1160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR1160 Applications
There are a lot of STMicroelectronics
2STR1160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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