2STR1160

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Mfr.Part #
2STR1160
Manufacturer
STMicroelectronics
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 60V 1A SOT23-3
Stock
18,891
In Stock :
18,891

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Terminal Form :
Gull wing
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
500mW
Mounting Type :
Surface Mount
Polarity/Channel Type :
NPN
Operating Temperature :
150°C TJ
Base Part Number :
2STR
Number of Elements :
1
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce :
180 @ 500mA 2V
Number of Pins :
3
Max Breakdown Voltage :
60V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Contact Plating :
Tin
Mount :
Surface Mount
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Length :
3.04mm
Transistor Type :
NPN
hFE Min :
180
Vce Saturation (Max) @ Ib, Ic :
430mV @ 100mA, 1A
Collector Emitter Breakdown Voltage :
60V
Transistor Element Material :
SILICON
Width :
1.6mm
Max Power Dissipation :
500mW
Element Configuration :
Single
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
60V
Collector Emitter Saturation Voltage :
430mV
ECCN Code :
EAR99
Termination :
SMD/SMT
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
210
Max Collector Current :
1A
Height :
1.3mm
Emitter Base Voltage (VEBO) :
5V
Terminal Position :
Dual
Collector Base Voltage (VCBO) :
60V
Transistor Application :
SWITCHING
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STR1160 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:2STR, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, 2STR1160 pinout, 2STR1160 datasheet PDF, 2STR1160 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STR1160 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STR1160


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2STR1160 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 430mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.

2STR1160 Features


the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V


2STR1160 Applications


There are a lot of STMicroelectronics
2STR1160 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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