2STR1160
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- Mfr.Part #
- 2STR1160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT23-3
- Stock
- 18,891
- In Stock ：
- 18,891
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- NPN
- Length :
- 3.04mm
- hFE Min :
- 180
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 430mV
- Height :
- 1.3mm
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 210
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2STR
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Transistor Application :
- SWITCHING
- Width :
- 1.6mm
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 100mA, 1A
- Pin Count :
- 3
- Max Power Dissipation :
- 500mW
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Datasheets
- 2STR1160
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 430mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 430mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR1160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 430mV
the vce saturation(Max) is 430mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR1160 Applications
There are a lot of STMicroelectronics
2STR1160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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