2STR2160
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- Mfr.Part #
- 2STR2160
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT23-3
- Stock
- 7,250
- In Stock ：
- 7,250
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 480mV @ 100mA, 1A
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -260mV
- Max Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- 2STR
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 500mW
- Factory Lead Time :
- 8 Weeks
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 500mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- hFE Min :
- 45
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Datasheets
- 2STR2160
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR2160 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -260mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 480mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
2STR2160 Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 480mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2STR2160 Applications
There are a lot of STMicroelectronics
2STR2160 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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