2STR1215
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- Mfr.Part #
- 2STR1215
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 1.5A SOT23-3
- Stock
- 13,556
- In Stock ：
- 13,556
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 15V
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 15V
- Height :
- 950μm
- Base Part Number :
- 2STR
- Collector Emitter Saturation Voltage :
- 850mV
- Max Collector Current :
- 1.5A
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 15V
- Collector Base Voltage (VCBO) :
- 15V
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 500mW
- Width :
- 1.3mm
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 850mV @ 200mA, 2A
- Datasheets
- 2STR1215
2STR1215 Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of 850mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 850mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
2STR1215 Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2STR1215 Applications
There are a lot of STMicroelectronics
2STR1215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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