2STR1215
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- Mfr.Part #
- 2STR1215
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 1.5A SOT23-3
- Stock
- 13,556
- In Stock ：
- 13,556
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Power Dissipation :
- 500mW
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 850mV
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 15V
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 850mV @ 200mA, 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Width :
- 1.3mm
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Power Dissipation :
- 500mW
- Max Collector Current :
- 1.5A
- Base Part Number :
- 2STR
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 950μm
- Max Breakdown Voltage :
- 15V
- Collector Emitter Breakdown Voltage :
- 15V
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Datasheets
- 2STR1215
2STR1215 Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2STR1215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.With a collector emitter saturation voltage of 850mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 850mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 15V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
2STR1215 Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 850mV
the vce saturation(Max) is 850mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2STR1215 Applications
There are a lot of STMicroelectronics
2STR1215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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