2SD1980TL
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- Mfr.Part #
- 2SD1980TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A CPT3
- Stock
- 10,362
- In Stock ：
- 10,362
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- SMD/SMT
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0857
- Height :
- 2.3mm
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- HTS Code :
- 8541.29.00.75
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 2A
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e2
- Base Part Number :
- 2SD1980
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Collector Emitter Saturation Voltage :
- 1.5V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 5.5mm
- Pbfree Code :
- yes
- Pin Count :
- 3
- hFE Min :
- 1000
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- Polarity :
- NPN
- Contact Plating :
- Copper, Tin
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 2A
- Voltage - Rated DC :
- 100V
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 100V
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Transition Frequency :
- 80MHz
- Length :
- 6.5mm
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 80MHz
- Published :
- 1999
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 20 Weeks
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Power - Max :
- 10W
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Elements :
- 1
- Current Rating :
- 2A
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- 2SD1980TL
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1980TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SD1980TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD1980TL Applications
There are a lot of ROHM Semiconductor
2SD1980TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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