2SD1980TL
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- Mfr.Part #
- 2SD1980TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A CPT3
- Stock
- 10,362
- In Stock ：
- 10,362
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Termination :
- SMD/SMT
- Collector Emitter Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Length :
- 6.5mm
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.5V
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0857
- Mounting Type :
- Surface Mount
- Base Part Number :
- 2SD1980
- Max Collector Current :
- 2A
- Voltage - Rated DC :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Contact Plating :
- Copper, Tin
- Height :
- 2.3mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Power Dissipation :
- 1W
- Width :
- 5.5mm
- Current Rating :
- 2A
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 1999
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 20 Weeks
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- JESD-609 Code :
- e2
- Packaging :
- Tape and Reel (TR)
- Continuous Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Polarity :
- NPN
- HTS Code :
- 8541.29.00.75
- hFE Min :
- 1000
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Gain Bandwidth Product :
- 80MHz
- JESD-30 Code :
- R-PSSO-G2
- Power - Max :
- 10W
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 80MHz
- Datasheets
- 2SD1980TL
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1980TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 2A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 2A volts is possible.
2SD1980TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD1980TL Applications
There are a lot of ROHM Semiconductor
2SD1980TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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