2SD1048-6-TB-E
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- Mfr.Part #
- 2SD1048-6-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,580
- In Stock ：
- 2,580
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Max Collector Current :
- 700mA
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 15V
- hFE Min :
- 200
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 250MHz
- Power Dissipation :
- 200mW
- Width :
- 1.5mm
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 15V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 125°C TJ
- JESD-609 Code :
- e6
- Collector Base Voltage (VCBO) :
- 20V
- Frequency :
- 250MHz
- Length :
- 2.9mm
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 15V
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 80mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Type :
- NPN
- Factory Lead Time :
- 7 Weeks
- Number of Terminations :
- 3
- Datasheets
- 2SD1048-6-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-6-TB-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 80mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 700mA volts.
2SD1048-6-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-6-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-6-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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