2SD1048-6-TB-E
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- Mfr.Part #
- 2SD1048-6-TB-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.7A 3CP
- Stock
- 2,580
- In Stock ：
- 2,580
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Height :
- 1.1mm
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 200
- Max Power Dissipation :
- 200mW
- Collector Emitter Saturation Voltage :
- 80mV
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Frequency :
- 250MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Length :
- 2.9mm
- Max Collector Current :
- 700mA
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 15V
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 50mA 2V
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 80mV @ 10mA, 100mA
- Width :
- 1.5mm
- Element Configuration :
- Single
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 15V
- Max Breakdown Voltage :
- 15V
- Lead Free :
- Lead Free
- Operating Temperature :
- 125°C TJ
- Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 7 Weeks
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 250MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 20V
- JESD-609 Code :
- e6
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Datasheets
- 2SD1048-6-TB-E
NPN 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1048-6-TB-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 80mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 15V volts.When collector current reaches its maximum, it can reach 700mA volts.
2SD1048-6-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
2SD1048-6-TB-E Applications
There are a lot of ON Semiconductor
2SD1048-6-TB-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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