2SD1949T106Q
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- Mfr.Part #
- 2SD1949T106Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A UMT3
- Stock
- 1,273
- In Stock ：
- 1,273
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e1
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Published :
- 2005
- Contact Plating :
- Copper, Silver, Tin
- Max Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 50V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 250MHz
- JESD-30 Code :
- R-PDSO-G3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- hFE Min :
- 120
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 3V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 250MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time :
- 13 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Terminal Position :
- Dual
- Base Part Number :
- 2SD1949
- Continuous Collector Current :
- 500mA
- Current Rating :
- 500mA
- Collector Emitter Saturation Voltage :
- 400mV
- Package / Case :
- SC-70, SOT-323
- Datasheets
- 2SD1949T106Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD1949T106Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 10mA 3V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
2SD1949T106Q Features
the DC current gain for this device is 120 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SD1949T106Q Applications
There are a lot of ROHM Semiconductor
2SD1949T106Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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