2SD1949T106Q
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- Mfr.Part #
- 2SD1949T106Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A UMT3
- Stock
- 1,273
- In Stock ：
- 1,273
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2SD1949
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 3V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 120
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 250MHz
- Factory Lead Time :
- 13 Weeks
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Continuous Collector Current :
- 500mA
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Current Rating :
- 500mA
- Voltage - Rated DC :
- 50V
- JESD-30 Code :
- R-PDSO-G3
- Transition Frequency :
- 250MHz
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Contact Plating :
- Copper, Silver, Tin
- Collector Emitter Saturation Voltage :
- 400mV
- Published :
- 2005
- HTS Code :
- 8541.21.00.75
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Datasheets
- 2SD1949T106Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD1949T106Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 10mA 3V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
2SD1949T106Q Features
the DC current gain for this device is 120 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SD1949T106Q Applications
There are a lot of ROHM Semiconductor
2SD1949T106Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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