2SD1918TLQ
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- Mfr.Part #
- 2SD1918TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A CPT3
- Stock
- 16,247
- In Stock ：
- 16,247
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 20 Weeks
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- hFE Min :
- 120
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Transition Frequency :
- 80MHz
- Transistor Element Material :
- SILICON
- Contact Plating :
- Copper, Tin
- Continuous Collector Current :
- 1.5A
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e2
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 10
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 160V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1.5A
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Power - Max :
- 10W
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 160V
- Termination :
- SMD/SMT
- Gain Bandwidth Product :
- 80MHz
- Published :
- 1999
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Breakdown Voltage :
- 160V
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2SD1918
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 160V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current Rating :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- HTS Code :
- 8541.29.00.75
- Mounting Type :
- Surface Mount
- Datasheets
- 2SD1918TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1918TLQ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 5V.When VCE saturation is 2V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 80MHz.This device can take an input voltage of 160V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
2SD1918TLQ Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1918TLQ Applications
There are a lot of ROHM Semiconductor
2SD1918TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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