2SD1918TLQ
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- Mfr.Part #
- 2SD1918TLQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A CPT3
- Stock
- 16,247
- In Stock ：
- 16,247
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2SD1918
- JESD-609 Code :
- e2
- Voltage - Rated DC :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Max Collector Current :
- 1.5A
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Current Rating :
- 1.5A
- Transition Frequency :
- 80MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 160V
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 80MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.75
- Mount :
- Surface Mount
- Power - Max :
- 10W
- Transistor Application :
- SWITCHING
- Contact Plating :
- Copper, Tin
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Copper (Sn98Cu2)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Published :
- 1999
- Collector Emitter Breakdown Voltage :
- 160V
- Max Breakdown Voltage :
- 160V
- Collector Emitter Voltage (VCEO) :
- 2V
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Power Dissipation :
- 1W
- Termination :
- SMD/SMT
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 1.5A
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- hFE Min :
- 120
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- 2SD1918TLQ
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1918TLQ Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 5V.When VCE saturation is 2V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1.5A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 80MHz.This device can take an input voltage of 160V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
2SD1918TLQ Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1918TLQ Applications
There are a lot of ROHM Semiconductor
2SD1918TLQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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