2SD1898T100Q
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- Mfr.Part #
- 2SD1898T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A MPT3
- Stock
- 819
- In Stock ：
- 819
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Terminal Finish :
- TIN COPPER
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- HTS Code :
- 8541.21.00.95
- Continuous Collector Current :
- 1A
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e2
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Terminal Form :
- Flat
- Max Breakdown Voltage :
- 80V
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SD1898
- Voltage - Rated DC :
- 80V
- Max Power Dissipation :
- 2W
- Contact Plating :
- Copper, Tin
- Power Dissipation :
- 500mW
- Published :
- 2009
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 120V
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- hFE Min :
- 82
- Collector Emitter Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current Rating :
- 1A
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Datasheets
- 2SD1898T100Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1898T100Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 20mA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
2SD1898T100Q Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1898T100Q Applications
There are a lot of ROHM Semiconductor
2SD1898T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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