2SD1863TV2Q
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- Mfr.Part #
- 2SD1863TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A ATV
- Stock
- 45,134
- In Stock ：
- 45,134
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Max Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- TIN SILVER COPPER
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Base Part Number :
- 2SD1863
- Max Collector Current :
- 150mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Box (TB)
- Power - Max :
- 1W
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 120V
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Package / Case :
- 3-SIP
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 150mV
- Mount :
- Through Hole
- Voltage - Rated DC :
- 80V
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- JESD-30 Code :
- R-PSIP-T3
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 1A
- hFE Min :
- 120
- Transistor Element Material :
- SILICON
- Published :
- 2004
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- 2SD1863TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1863TV2Q Overview
This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 400mV @ 20mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 150mA volts is possible.
2SD1863TV2Q Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1863TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1863TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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