2SD1859TV2R
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- Mfr.Part #
- 2SD1859TV2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A ATV
- Stock
- 14,839
- In Stock ：
- 14,839
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 120MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Package / Case :
- 3-SIP
- JESD-30 Code :
- R-PSIP-T3
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Max Collector Current :
- 700mA
- Voltage - Rated DC :
- 80V
- Gain Bandwidth Product :
- 120MHz
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- hFE Min :
- 120
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2004
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Current Rating :
- 700mA
- Collector Emitter Saturation Voltage :
- 200mV
- Max Power Dissipation :
- 1W
- Max Breakdown Voltage :
- 80V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- TIN SILVER COPPER
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 400mV
- Base Part Number :
- 2SD1859
- Datasheets
- 2SD1859TV2R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1859TV2R Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 100mA 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 700mA volts.
2SD1859TV2R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 700mA
a transition frequency of 120MHz
2SD1859TV2R Applications
There are a lot of ROHM Semiconductor
2SD1859TV2R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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