2SD1858TV2Q
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- Mfr.Part #
- 2SD1858TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 32V 1A ATV
- Stock
- 53,915
- In Stock ：
- 53,915
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSIP-T3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Lead Free :
- Lead Free
- Current Rating :
- 1A
- Collector Emitter Breakdown Voltage :
- 32V
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 400mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Voltage - Rated DC :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Published :
- 2010
- Transistor Application :
- SWITCHING
- Package / Case :
- 3-SIP
- Transition Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Pbfree Code :
- yes
- Packaging :
- Tape and Box (TB)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Terminal Finish :
- TIN SILVER COPPER
- hFE Min :
- 120
- Max Collector Current :
- 1A
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Datasheets
- 2SD1858TV2Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1858TV2Q Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).150MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
2SD1858TV2Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1858TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1858TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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