2SD1857TV2P
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- Mfr.Part #
- 2SD1857TV2P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 120V 2A ATV
- Stock
- 19,262
- In Stock ：
- 19,262
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Current Rating :
- 1.5A
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 120V
- Max Collector Current :
- 2A
- Collector Base Voltage (VCBO) :
- 120V
- Published :
- 2006
- Packaging :
- Tape and Box (TB)
- Package / Case :
- 3-SIP
- Base Part Number :
- 2SD1857
- Lead Free :
- Lead Free
- HTS Code :
- 8541.29.00.75
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Voltage (VCEO) :
- 2V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Number of Elements :
- 1
- Voltage - Rated DC :
- 120V
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 5V
- Number of Terminations :
- 3
- hFE Min :
- 82
- Current - Collector (Ic) (Max) :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSIP-T3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 80MHz
- Transition Frequency :
- 80MHz
- Terminal Finish :
- TIN SILVER COPPER
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Transistor Application :
- SWITCHING
- Datasheets
- 2SD1857TV2P
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1857TV2P Overview
In this device, the DC current gain is 82 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 80MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SD1857TV2P Features
the DC current gain for this device is 82 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1857TV2P Applications
There are a lot of ROHM Semiconductor
2SD1857TV2P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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