2SD1834T100
- Mfr.Part #
- 2SD1834T100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 1A MPT3
- Stock
- 14,623
- In Stock :
- 14,623
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Transition Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 1.5V
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Collector Current :
- 1A
- Number of Pins :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- 1A
- Mount :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- REACH SVHC :
- No SVHC
- Polarity :
- NPN
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 3V
- Transistor Type :
- NPN - Darlington
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 2W
- Package / Case :
- TO-243AA
- Contact Plating :
- Copper, Tin
- JESD-609 Code :
- e2
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.5mm
- Published :
- 2005
- hFE Min :
- 2000
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 13 Weeks
- Current Rating :
- -1A
- Gain Bandwidth Product :
- 150MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Length :
- 4.5mm
- Voltage - Rated DC :
- -60V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Base Part Number :
- 2SD1834
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 500mW
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Termination :
- SMD/SMT
- Max Breakdown Voltage :
- 60V
- Width :
- 2.5mm
- Datasheets
- 2SD1834T100

NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
2SD1834T100 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SD1834T100 Features
the DC current gain for this device is 2000 @ 500mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 150MHz
2SD1834T100 Applications
There are a lot of ROHM Semiconductor
2SD1834T100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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