2SD1664T100Q
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- Mfr.Part #
- 2SD1664T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 1A MPT3
- Stock
- 15,139
- In Stock ：
- 15,139
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 150MHz
- Max Collector Current :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Voltage (VCEO) :
- 32V
- Case Connection :
- COLLECTOR
- VCEsat-Max :
- 0.4 V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 3
- Element Configuration :
- Single
- JESD-609 Code :
- e2
- Max Power Dissipation :
- 500mW
- Terminal Finish :
- TIN COPPER
- Power - Max :
- 2W
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Termination :
- SMD/SMT
- hFE Min :
- 82
- Max Breakdown Voltage :
- 32V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Contact Plating :
- Copper, Tin
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 500mW
- Current Rating :
- 1A
- Base Part Number :
- 2SD1664
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 32V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 40V
- Published :
- 1998
- Package / Case :
- TO-243AA
- Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SD1664T100Q
2SD1664T100Q Documents
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1664T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD1664T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100Q Applications
There are a lot of ROHM Semiconductor
2SD1664T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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