2SD1664T100Q
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- Mfr.Part #
- 2SD1664T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 1A MPT3
- Stock
- 15,139
- In Stock ：
- 15,139
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Published :
- 1998
- Termination :
- SMD/SMT
- Collector Emitter Voltage (VCEO) :
- 32V
- Max Collector Current :
- 1A
- hFE Min :
- 82
- Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- VCEsat-Max :
- 0.4 V
- Base Part Number :
- 2SD1664
- Collector Base Voltage (VCBO) :
- 40V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Power - Max :
- 2W
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Terminal Finish :
- TIN COPPER
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- JESD-609 Code :
- e2
- Power Dissipation :
- 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 32V
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Contact Plating :
- Copper, Tin
- Current Rating :
- 1A
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 500mW
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Max Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 32V
- Pin Count :
- 3
- Transition Frequency :
- 150MHz
- Datasheets
- 2SD1664T100Q
2SD1664T100Q Documents
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1664T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD1664T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100Q Applications
There are a lot of ROHM Semiconductor
2SD1664T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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