2SD1664T100Q
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- Mfr.Part #
- 2SD1664T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 32V 1A MPT3
- Stock
- 15,139
- In Stock ：
- 15,139
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- JESD-609 Code :
- e2
- ECCN Code :
- EAR99
- Current Rating :
- 1A
- Voltage - Rated DC :
- 32V
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 150MHz
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 40V
- Contact Plating :
- Copper, Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- hFE Min :
- 82
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Power Dissipation :
- 500mW
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Base Part Number :
- 2SD1664
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Frequency :
- 150MHz
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 500mW
- Package / Case :
- TO-243AA
- Gain Bandwidth Product :
- 150MHz
- Published :
- 1998
- Pin Count :
- 3
- Max Breakdown Voltage :
- 32V
- Polarity/Channel Type :
- NPN
- VCEsat-Max :
- 0.4 V
- Max Collector Current :
- 1A
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 32V
- Terminal Finish :
- TIN COPPER
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Collector Emitter Breakdown Voltage :
- 32V
- Datasheets
- 2SD1664T100Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1664T100Q Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 32V volts.When collector current reaches its maximum, it can reach 1A volts.
2SD1664T100Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
2SD1664T100Q Applications
There are a lot of ROHM Semiconductor
2SD1664T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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