2SCR523UBTL
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- Mfr.Part #
- 2SCR523UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A UMT3F
- Stock
- 12,000
- In Stock ：
- 12,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 85
- ECCN Code :
- EAR99
- Published :
- 2010
- Terminal Position :
- Dual
- Package / Case :
- SC-85
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Continuous Collector Current :
- 200mA
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- hFE Min :
- 120
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-F3
- Collector Emitter Saturation Voltage :
- 100mV
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 13 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Max Breakdown Voltage :
- 50V
- Power - Max :
- 200mW
- Transition Frequency :
- 350MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 350MHz
- Number of Elements :
- 1
- Datasheets
- 2SCR523UBTL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SCR523UBTL Overview
In this device, the DC current gain is 120 @ 1mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.350MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
2SCR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523UBTL Applications
There are a lot of ROHM Semiconductor
2SCR523UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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