2SCR523EBTL
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- Mfr.Part #
- 2SCR523EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A EMT3F
- Stock
- 106,904
- In Stock ：
- 106,904
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 150mW
- Transition Frequency :
- 350MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 13 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Package / Case :
- SC-89, SOT-490
- Gain Bandwidth Product :
- 350MHz
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2010
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Power - Max :
- 150mW
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.75
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 100mV
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 50V
- Terminal Position :
- Dual
- Datasheets
- 2SCR523EBTL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SCR523EBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 350MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2SCR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523EBTL Applications
There are a lot of ROHM Semiconductor
2SCR523EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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