2SCR523EBTL
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- Mfr.Part #
- 2SCR523EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A EMT3F
- Stock
- 106,904
- In Stock ：
- 106,904
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 350MHz
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Terminal Position :
- Dual
- Max Power Dissipation :
- 150mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Max Breakdown Voltage :
- 50V
- Terminal Form :
- Flat
- HTS Code :
- 8541.21.00.75
- Power - Max :
- 150mW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Published :
- 2010
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Package / Case :
- SC-89, SOT-490
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transition Frequency :
- 350MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Factory Lead Time :
- 13 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 50V
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 100mV
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Datasheets
- 2SCR523EBTL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SCR523EBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 350MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
2SCR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SCR523EBTL Applications
There are a lot of ROHM Semiconductor
2SCR523EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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