2SCR522EBTL
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- Mfr.Part #
- 2SCR522EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.2A EMT3F
- Stock
- 8,311
- In Stock ：
- 8,311
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 20V
- Collector Emitter Breakdown Voltage :
- 20V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 120mV
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F3
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 400MHz
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2015
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 200mA
- hFE Min :
- 120
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- 20V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 150mW
- Package / Case :
- SC-89, SOT-490
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Transition Frequency :
- 400MHz
- Datasheets
- 2SCR522EBTL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SCR522EBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 2V.The collector emitter saturation voltage is 120mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 200mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 400MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 200mA volts can be achieved.
2SCR522EBTL Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522EBTL Applications
There are a lot of ROHM Semiconductor
2SCR522EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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