2SCR514PT100
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- Mfr.Part #
- 2SCR514PT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A MPT3
- Stock
- 150
- In Stock ：
- 150
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- hFE Min :
- 120
- Power Dissipation :
- 2W
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 80V
- Transition Frequency :
- 320MHz
- Number of Terminations :
- 3
- Contact Plating :
- Copper, Tin
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-243AA
- Max Collector Current :
- 700mA
- Terminal Form :
- Flat
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 15mA, 300mA
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- TIN COPPER
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 2W
- Base Part Number :
- 2SCR514
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 700mA
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Max Frequency :
- 320MHz
- ECCN Code :
- EAR99
- JESD-609 Code :
- e2
- Published :
- 2013
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Datasheets
- 2SCR514PT100
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SCR514PT100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 700mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 320MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 700mA volts.
2SCR514PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 15mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR514PT100 Applications
There are a lot of ROHM Semiconductor
2SCR514PT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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