2SCR502UBTL
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- Mfr.Part #
- 2SCR502UBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-85
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A UMT3F
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 100mV
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Factory Lead Time :
- 13 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 200mA
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PDSO-F3
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Package / Case :
- SC-85
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 360MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2012
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 360MHz
- Max Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 200
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- Max Power Dissipation :
- 200mW
- Number of Pins :
- 85
- Datasheets
- 2SCR502UBTL
NPN 150°C TJ 200nA ICBO 1 Elements 3 Terminations SILICON NPN SC-85 Tape & Reel (TR) Surface Mount
2SCR502UBTL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 360MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
2SCR502UBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 10mA, 200mA
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SCR502UBTL Applications
There are a lot of ROHM Semiconductor
2SCR502UBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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