2SCR502EBTL
- Mfr.Part #
- 2SCR502EBTL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A EMT3F
- Stock
- 185
- In Stock :
- 185
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 200mA
- Element Configuration :
- Single
- Published :
- 2015
- Gain Bandwidth Product :
- 360MHz
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- Continuous Collector Current :
- 500mA
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Package / Case :
- SC-89, SOT-490
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 360MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-F3
- Max Power Dissipation :
- 150mW
- hFE Min :
- 200
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 100mV
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- Terminal Form :
- Flat
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- 2SCR502EBTL

NPN 150°C TJ 200nA ICBO 1 Elements 3 Terminations SILICON NPN SC-89, SOT-490 Tape & Reel (TR) Surface Mount
2SCR502EBTL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 360MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.
2SCR502EBTL Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 10mA, 200mA
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SCR502EBTL Applications
There are a lot of ROHM Semiconductor
2SCR502EBTL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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