2SC5226A-5-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Collector Current :

70mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

135 @ 20mA 5V

Noise Figure (dB Typ @ f) :

1dB @ 1GHz

Gain :

12dB

Width :

1.25mm

Transition Frequency :

7000MHz

Collector Emitter Voltage (VCEO) :

10V

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Frequency :

7GHz

Max Power Dissipation :

150mW

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

2V

Terminal Form :

Gull wing

Number of Terminations :

3

Collector Base Voltage (VCBO) :

20V

Collector Emitter Breakdown Voltage :

10V

Radiation Hardening :

No

Terminal Finish :

Tin/Bismuth (Sn/Bi)

ECCN Code :

EAR99

Height :

900μm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Gain Bandwidth Product :

7 GHz

Number of Pins :

3

Element Configuration :

Single

Pbfree Code :

yes

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Transistor Type :

NPN

Pin Count :

3

Max Breakdown Voltage :

10V

Polarity/Channel Type :

NPN

Package / Case :

SC-70, SOT-323

Power Dissipation :

150mW

JESD-609 Code :

e6

Length :

2mm

Surface Mount :

yes

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tape and Reel (TR)