2SC2412KT146R
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- Mfr.Part #
- 2SC2412KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMT3
- Stock
- 600,000
- In Stock ：
- 600,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 13 Weeks
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- 150mA
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Contact Plating :
- Copper, Silver, Tin
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 180MHz
- Max Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 50V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- HTS Code :
- 8541.21.00.75
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- Max Frequency :
- 180MHz
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 150mA
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 60V
- Width :
- 1.6mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Current Rating :
- 150mA
- Collector Emitter Saturation Voltage :
- 400mV
- Base Part Number :
- 2SC2412
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 180MHz
- VCEsat-Max :
- 0.4 V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 120
- Max Power Dissipation :
- 200mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Height :
- 1.1mm
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Pin Count :
- 3
- Datasheets
- 2SC2412KT146R
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC2412KT146R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SC2412KT146R Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC2412KT146R Applications
There are a lot of ROHM Semiconductor
2SC2412KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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