2SC2412KT146R
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- Mfr.Part #
- 2SC2412KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A SMT3
- Stock
- 600,000
- In Stock ：
- 600,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 150mA
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 150mA
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- 150mA
- Published :
- 2004
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- VCEsat-Max :
- 0.4 V
- Gain Bandwidth Product :
- 180MHz
- Height :
- 1.1mm
- Width :
- 1.6mm
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Transition Frequency :
- 180MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Element Configuration :
- Single
- Voltage - Rated DC :
- 50V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Polarity/Channel Type :
- NPN
- hFE Min :
- 120
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.75
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SC2412
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1mA 6V
- Max Power Dissipation :
- 200mW
- Factory Lead Time :
- 13 Weeks
- Max Breakdown Voltage :
- 50V
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 400mV
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Contact Plating :
- Copper, Silver, Tin
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Max Frequency :
- 180MHz
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SC2412KT146R
2SC2412KT146R Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SC2412KT146R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 150mA in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 180MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
2SC2412KT146R Features
the DC current gain for this device is 180 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz
2SC2412KT146R Applications
There are a lot of ROHM Semiconductor
2SC2412KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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