2SC2058STPP
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- Mfr.Part #
- 2SC2058STPP
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A SPT
- Stock
- 18,125
- In Stock ：
- 18,125
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-72 Formed Leads
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.75
- Transition Frequency :
- 300MHz
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 1mA 6V
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 50mA
- Published :
- 2007
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 25V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 300MHz
- Max Collector Current :
- 50mA
- Max Power Dissipation :
- 300mW
- Terminal Finish :
- TIN SILVER COPPER
- Datasheets
- 2SC2058STPP
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Reel (TR) Through Hole
2SC2058STPP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 1mA 6V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 50mA volts.
2SC2058STPP Features
the DC current gain for this device is 82 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
2SC2058STPP Applications
There are a lot of ROHM Semiconductor
2SC2058STPP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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