2SB852KT146B
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- Mfr.Part #
- 2SB852KT146B
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 32V 0.3A SMT3
- Stock
- 2,248
- In Stock ：
- 2,248
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- hFE Min :
- 5000
- Mount :
- Surface Mount
- Terminal Finish :
- TIN SILVER COPPER
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -1.5V
- Height :
- 1.1mm
- Current Rating :
- -300mA
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 400μA, 200mA
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 32V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5000 @ 100mA 5V
- Length :
- 2.9mm
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Number of Pins :
- 3
- Power - Max :
- 200mW
- Polarity :
- PNP
- Max Breakdown Voltage :
- 32V
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Width :
- 1.6mm
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Voltage - Rated DC :
- -32V
- Max Power Dissipation :
- 200mW
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Voltage (VCEO) :
- 32V
- Mounting Type :
- Surface Mount
- Base Part Number :
- 2SB852
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 300mA
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 200MHz
- Contact Plating :
- Copper, Silver, Tin
- Collector Base Voltage (VCBO) :
- 40V
- Datasheets
- 2SB852KT146B
PNP - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SB852KT146B Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 400μA, 200mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 32V volts.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
2SB852KT146B Features
the DC current gain for this device is 5000 @ 100mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 400μA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is -300mA
a transition frequency of 200MHz
2SB852KT146B Applications
There are a lot of ROHM Semiconductor
2SB852KT146B applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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