2SB815-7-TB-E

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Mfr.Part #
2SB815-7-TB-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 15V 0.7A 3CP
Stock
13,353
In Stock :
13,353

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Number of Terminations :
3
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
-5V
Vce Saturation (Max) @ Ib, Ic :
80mV @ 10mA, 100mA
Terminal Position :
Dual
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Max Frequency :
250MHz
Gain Bandwidth Product :
250MHz
Collector Emitter Saturation Voltage :
-120mV
Packaging :
Tape and Reel (TR)
hFE Min :
300
Height :
1.1mm
Operating Temperature :
125°C TJ
Number of Elements :
1
Pbfree Code :
yes
Max Collector Current :
700mA
Mounting Type :
Surface Mount
Length :
2.9mm
Max Power Dissipation :
200mW
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Collector Base Voltage (VCBO) :
-20V
Current - Collector Cutoff (Max) :
100nA ICBO
Factory Lead Time :
4 Weeks
Transistor Type :
PNP
Mount :
Surface Mount
Number of Pins :
3
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Polarity/Channel Type :
PNP
Lead Free :
Lead Free
Transition Frequency :
250MHz
Collector Emitter Voltage (VCEO) :
15V
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 50mA 2V
Width :
1.5mm
Package / Case :
TO-236-3, SC-59, SOT-23-3
JESD-609 Code :
e6
Published :
2012
Current - Collector (Ic) (Max) :
700mA
Datasheets
2SB815-7-TB-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB815-7-TB-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:125°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, 2SB815-7-TB-E pinout, 2SB815-7-TB-E datasheet PDF, 2SB815-7-TB-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB815-7-TB-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB815-7-TB-E


PNP 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2SB815-7-TB-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 50mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -120mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 80mV @ 10mA, 100mA.The emitter base voltage can be kept at -5V for high efficiency.The part has a transition frequency of 250MHz.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.

2SB815-7-TB-E Features


the DC current gain for this device is 300 @ 50mA 2V
a collector emitter saturation voltage of -120mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz


2SB815-7-TB-E Applications


There are a lot of ON Semiconductor
2SB815-7-TB-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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