2SB817C-1E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Continuous Collector Current :

12A

Reach Compliance Code :

not_compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Base Voltage (VCBO) :

160V

Package / Case :

TO-3P-3, SC-65-3

Factory Lead Time :

2 Weeks

Collector Emitter Saturation Voltage :

2V

Current - Collector Cutoff (Max) :

100μA ICBO

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

140V

Vce Saturation (Max) @ Ib, Ic :

2V @ 500mA, 5A

Mount :

Through Hole

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Transition Frequency :

10MHz

Published :

2003

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

140V

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

6V

JEDEC-95 Code :

TO-247

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Number of Pins :

3

ECCN Code :

EAR99

Frequency :

10MHz

Mounting Type :

Through Hole

Terminal Position :

Single

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

12A

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Transistor Type :

PNP

Max Power Dissipation :

120W

REACH SVHC :

No SVHC

hFE Min :

100

Number of Elements :

1