2SB817C
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- Mfr.Part #
- 2SB817C
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- PNP SILICON TRANSISTOR
- Stock
- 17,513
- In Stock ：
- 17,513
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 120W
- Packaging :
- Tube
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-247
- Continuous Collector Current :
- 12A
- Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2V
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 500mA, 5A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Reach Compliance Code :
- not_compliant
- hFE Min :
- 100
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 140V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Frequency :
- 10MHz
- Published :
- 2003
- Package / Case :
- TO-3P-3, SC-65-3
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 2.5W
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 140V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 160V
- Max Collector Current :
- 12A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Transition Frequency :
- 10MHz
- Datasheets
- 2SB817C
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole
2SB817C-1E Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 500mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 12A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 12A volts.
2SB817C-1E Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 10MHz
2SB817C-1E Applications
There are a lot of ON Semiconductor
2SB817C-1E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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