2SB817C

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Mfr.Part #
2SB817C
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
PNP SILICON TRANSISTOR
Stock
17,513
In Stock :
17,513

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Power Dissipation :
2.5W
REACH SVHC :
No SVHC
Configuration :
Single
Number of Pins :
3
Number of Terminations :
3
Mount :
Through Hole
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Published :
2003
hFE Min :
100
Max Power Dissipation :
120W
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
160V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 5V
Frequency :
10MHz
JEDEC-95 Code :
TO-247
Mounting Type :
Through Hole
Package / Case :
TO-3P-3, SC-65-3
Max Collector Current :
12A
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Reach Compliance Code :
not_compliant
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
140V
Polarity/Channel Type :
PNP
Collector Emitter Saturation Voltage :
2V
Factory Lead Time :
2 Weeks
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100μA ICBO
Continuous Collector Current :
12A
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
2V @ 500mA, 5A
Collector Emitter Breakdown Voltage :
140V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Packaging :
Tube
Emitter Base Voltage (VEBO) :
6V
Transition Frequency :
10MHz
Datasheets
2SB817C
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB817C from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:150°C TJ, 2SB817C pinout, 2SB817C datasheet PDF, 2SB817C amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB817C ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB817C


PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3, SC-65-3 Tube Through Hole

2SB817C-1E Overview


DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 500mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at 12A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 12A volts.

2SB817C-1E Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 10MHz


2SB817C-1E Applications


There are a lot of ON Semiconductor
2SB817C-1E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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